onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L040N120SC1
- RS 제품 번호:
- 202-5699
- 제조사 부품 번호:
- NTH4L040N120SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩61,419.60
마지막 RS 재고
- 최종적인 630 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 112 | ₩30,709.80 | ₩61,419.60 |
| 114 - 224 | ₩29,939.00 | ₩59,878.00 |
| 226 + | ₩29,478.40 | ₩58,956.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5699
- 제조사 부품 번호:
- NTH4L040N120SC1
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Standards/Approvals | RoHS | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.7V | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Standards/Approvals RoHS | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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