onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

₩16,036.40

Add to Basket
Select or type quantity
재고있음
  • 8 개 단위 배송 준비 완료
  • 추가로 2026년 2월 11일 부터 304 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Units
Per unit
Per Pack*
2 - 112₩8,018.20₩16,036.40
114 - 224₩7,820.80₩15,641.60
226 +₩7,698.60₩15,397.20

*price indicative

Packaging Options:
RS Stock No.:
202-5707
Mfr. Part No.:
NTHL160N120SC1
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

브랜드

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

119W

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.87mm

Height

20.82mm

Standards/Approvals

RoHS

Width

4.82 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

Related links