onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- RS Stock No.:
- 202-5697
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
₩42,544.40
마지막 RS 재고
- 최종적인 174 개 unit(s)이 배송 준비 됨
Units | Per unit |
|---|---|
| 1 - 112 | ₩42,544.40 |
| 113 - 224 | ₩41,472.80 |
| 225 + | ₩40,645.60 |
*price indicative
- RS Stock No.:
- 202-5697
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 510W | |
| Forward Voltage Vf | 3.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 18.62mm | |
| Standards/Approvals | No | |
| Height | 15.2mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 510W | ||
Forward Voltage Vf 3.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Operating Temperature 175°C | ||
Length 18.62mm | ||
Standards/Approvals No | ||
Height 15.2mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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