onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- RS 제품 번호:
- 202-5697
- 제조사 부품 번호:
- NTH4L020N120SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩42,544.40
마지막 RS 재고
- 최종적인 174 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 112 | ₩42,544.40 |
| 113 - 224 | ₩41,472.80 |
| 225 + | ₩40,645.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5697
- 제조사 부품 번호:
- NTH4L020N120SC1
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.7V | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.2mm | |
| Length | 18.62mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.7V | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 15.2mm | ||
Length 18.62mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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