onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247

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RS 제품 번호:
202-5700
제조사 부품 번호:
NTH4L080N120SC1
제조업체:
onsemi
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브랜드

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Height

22.74mm

Standards/Approvals

RoHS

Width

5.2 mm

Length

15.2mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

110mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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