onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247

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RS 재고 번호:
202-5696
제조 부품 번호:
NTH4L020N120SC1
제조업체:
onsemi
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브랜드

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

220nC

Maximum Power Dissipation Pd

510W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.7V

Maximum Operating Temperature

175°C

Width

5.2 mm

Length

18.62mm

Height

15.2mm

Standards/Approvals

No

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

20mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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