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onsemi Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NVHL040N65S3F

RS 제품 번호:: 186-1516
제조사 부품 번호:: NVHL040N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NVHL040N65S3F

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RS 제품 번호:: 186-1516
제조사 부품 번호:: NVHL040N65S3F
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	446W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	153nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Width	4.82 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 446W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 153nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Width 4.82 mm
	Automotive Standard AEC-Q101

Datasheet NVHL040N65S3F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)

PPAP Capable

Typ. RDS(on) = 32 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

onsemi Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NVHL040N65S3F

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