제조사부품번호

onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NVHL110N65S3F

RS 제품 번호:: 186-1315
제조사 부품 번호:: NVHL110N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NVHL110N65S3F

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RS 제품 번호:: 186-1315
제조사 부품 번호:: NVHL110N65S3F
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	240W
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Height	20.82mm
	Width	4.82 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 240W
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Height 20.82mm
	Width 4.82 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVHL110N65S3F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

PPAP Capable

Typ. RDS(on) = 93 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NVHL110N65S3F

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