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onsemi FCH040N65S3 Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 FCH040N65S3-F155

RS 제품 번호:: 172-4620
제조사 부품 번호:: FCH040N65S3-F155
제조업체:: onsemi

onsemi FCH040N65S3 Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 FCH040N65S3-F155

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩19,176.00

마지막 RS 재고

최종적인 843 개 unit(s)이 배송 준비 됨

수량	한팩당
1 - 112	₩19,176.00
113 - 224	₩18,837.60
225 +	₩18,499.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 172-4620
제조사 부품 번호:: FCH040N65S3-F155
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	650V
	Series	FCH040N65S3
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	136nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	417W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Width	4.82 mm
	Length	15.87mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 650V
	Series FCH040N65S3
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 136nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 417W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Width 4.82 mm
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

onsemi FCH040N65S3 Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 FCH040N65S3-F155

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