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onsemi Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F

RS 제품 번호:: 186-1497
제조사 부품 번호:: NVHL027N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F

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Subtotal (1 unit)*

₩24,402.40

일시적 품절

2026년 5월 04일 부터 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 186-1497
제조사 부품 번호:: NVHL027N65S3F
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	27.4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	595W
	Typical Gate Charge Qg @ Vgs	227nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Width	4.82 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 27.4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 595W
	Typical Gate Charge Qg @ Vgs 227nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Width 4.82 mm
	Automotive Standard AEC-Q101

Datasheet NVHL027N65S3F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

PPAP Capable

Typ. RDS(on) = 27.4 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

onsemi Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F

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