onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 178-4256
Mfr. Part No.:: NTHL110N65S3F
Brand:: onsemi

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

Image representative of range

Bulk discount available

Subtotal (1 tube of 30 units)*

₩201,742.80

재고있음

390 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

Units	Per unit	Per Tube*
30 - 30	₩6,724.76	₩201,725.88
60 - 90	₩6,621.36	₩198,657.72
120 +	₩6,474.72	₩194,258.52

*price indicative

RS Stock No.:: 178-4256
Mfr. Part No.:: NTHL110N65S3F
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Width	4.82 mm
	Automotive Standard	No

	Select all
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

Related links