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onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

RS 제품 번호:: 178-4486
제조사 부품 번호:: NTHL110N65S3F
제조업체:: onsemi

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩18,254.80

재고있음

410 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 6	₩9,127.40	₩18,254.80
8 - 14	₩8,901.80	₩17,803.60
16 +	₩8,770.20	₩17,540.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4486
제조사 부품 번호:: NTHL110N65S3F
제조업체:: onsemi

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Width	4.82 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

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