onsemi NTHL N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 NTHL065N65S3F
- RS 제품 번호:
- 178-4468
- 제조사 부품 번호:
- NTHL065N65S3F
- 제조업체:
- onsemi
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개당가격(30개가 1튜브안에)
₩347,040.00
- RS 제품 번호:
- 178-4468
- 제조사 부품 번호:
- NTHL065N65S3F
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Series | NTHL | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 46 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 20.82 mm | |
| Length | 15.87 mm | |
| Maximum Drain Source Resistance (Rds) | 65 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 337 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 98 nC | |
| Width | 4.82 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Series NTHL | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 46 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 20.82 mm | ||
Length 15.87 mm | ||
Maximum Drain Source Resistance (Rds) 65 mΩ | ||
Maximum Gate Source Voltage (Vgs) 30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 337 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 98 nC | ||
Width 4.82 mm | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features:
700V@TJ=150
Ultra Low Gate Charge (Typ.Qg=98nC)
Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)
Excellent body diode performance (lowQrr,robust body diode)
Optimized Capacitance
Typ. RDS(on)=54mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift fullbridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar/UPS
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