제조사부품번호

Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212

RS 제품 번호:: 178-3956P
제조사 부품 번호:: SQS944ENW-T1_GE3
제조업체:: Vishay Siliconix

Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212

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RS 제품 번호:: 178-3956P
제조사 부품 번호:: SQS944ENW-T1_GE3
제조업체:: Vishay Siliconix

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAK 1212
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.6nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	27.8W
	Forward Voltage Vf	0.82V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Width	3.15 mm
	Height	1.07mm
	Length	3.15mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAK 1212
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.6nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 27.8W
	Forward Voltage Vf 0.82V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Width 3.15 mm
	Height 1.07mm
	Length 3.15mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

TrenchFET® power MOSFET

Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212

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