Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3
- RS 제품 번호:
- 178-3956
- 제조사 부품 번호:
- SQS944ENW-T1_GE3
- 제조업체:
- Vishay Siliconix
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩29,516.00
마지막 RS 재고
- 최종적인 2,975 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 725 | ₩1,180.64 | ₩29,516.00 |
| 750 - 1475 | ₩1,150.56 | ₩28,782.80 |
| 1500 + | ₩1,133.64 | ₩28,331.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-3956
- 제조사 부품 번호:
- SQS944ENW-T1_GE3
- 제조업체:
- Vishay Siliconix
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 27.8W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 3.15 mm | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 27.8W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 3.15 mm | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
제외
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
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