제조사부품번호

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

RS 제품 번호:: 178-3920
제조사 부품 번호:: SiSS12DN-T1-GE3
제조업체:: Vishay Siliconix

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용

RS는 이 제품을 더 이상 판매하지 않습니다.

RS 제품 번호:: 178-3920
제조사 부품 번호:: SiSS12DN-T1-GE3
제조업체:: Vishay Siliconix

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAK 1212
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	59nC
	Maximum Power Dissipation Pd	65.7W
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.07mm
	Length	3.15mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAK 1212
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 59nC
	Maximum Power Dissipation Pd 65.7W
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.07mm
	Length 3.15mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

TrenchFET® Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

관련된 링크들