Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

RS 제품 번호:: 178-3693
제조사 부품 번호:: SiS110DN-T1-GE3
제조업체:: Vishay Siliconix

Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 3000 units)*

₩1,503,450.00

일시적 품절

2026년 10월 27일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 3000	₩501.15	₩1,502,865.00
6000 - 9000	₩485.55	₩1,457,820.00
12000 +	₩471.90	₩1,414,530.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-3693
제조사 부품 번호:: SiS110DN-T1-GE3
제조업체:: Vishay Siliconix

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay Siliconix
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK 1212
	Series	SiS110DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	24W
	Maximum Operating Temperature	150°C
	Height	1.07mm
	Width	3.15mm
	Standards/Approvals	RoHS
	Length	3.15mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay Siliconix
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK 1212
	Series SiS110DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 24W
	Maximum Operating Temperature 150°C
	Height 1.07mm
	Width 3.15mm
	Standards/Approvals RoHS
	Length 3.15mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions

Applications

• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules

What mounting style does it require for assembly?

It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.

How wide a temperature range can it tolerate in service?

It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.

What gate voltage limits should designers observe?

The device permits gate-source voltages up to 20V

designs should ensure the gate drive stays within this constraint to protect the gate oxide.

How many pins does the package present for circuit integration?

The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.

Is this part specified for automotive use?

It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.