Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- RS 제품 번호:
- 790-413
- 제조사 부품 번호:
- MXP120A080SE-T1GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩20,860.00
일시적 품절
- 2027년 2월 16일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩20,860.00 |
| 10 - 49 | ₩12,932.00 |
| 50 - 99 | ₩10,006.00 |
| 100 + | ₩6,768.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 790-413
- 제조사 부품 번호:
- MXP120A080SE-T1GE3
- 제조업체:
- Vishay
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 185W | |
| Forward Voltage Vf | 4.7V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 9.23mm | |
| Standards/Approvals | RoHS | |
| Width | 10.28mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 185W | ||
Forward Voltage Vf 4.7V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 9.23mm | ||
Standards/Approvals RoHS | ||
Width 10.28mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs improves reliability
Gate-source voltage of -10 to +22 V allows flexible operation
Continuous drain current of 32 A ensures effective functionality
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