Vishay MaxSiC N channel-Channel MOSFET, 52 A, 1200 V N, 7-Pin TO-263-7L MXPQ120A045SE-1GE3

N
대량 구매 할인 기용 가능
View bulk pricing options

Subtotal (1 unit)*

₩30,094.35

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량
한팩당
1 - 4₩30,094.35
5 +₩29,484.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
790-411
제조사 부품 번호:
MXPQ120A045SE-1GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7L

Series

MaxSiC

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

22V

Typical Gate Charge Qg @ Vgs

82nC

Maximum Power Dissipation Pd

268W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

4.9V

Maximum Operating Temperature

175°C

Width

10.28mm

Length

9.23mm

Standards/Approvals

RoHS

Height

4.5mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
TW
The Vishay 1200 V N-Channel SiC MOSFET is designed for demanding power applications, combining speed, reliability, and compliance. Its Advanced construction ensures efficient performance while meeting strict automotive and environmental standards.

AEC-Q101 qualified for automotive-grade reliability

Fast switching speed for improved efficiency

Halogen free for safer and eco-friendly use

관련된 링크들