Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- RS 제품 번호:
- 790-412
- 제조사 부품 번호:
- MXP120A063SE-T1GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
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₩23,277.15
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩23,277.15 |
| 5 + | ₩22,820.85 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 790-412
- 제조사 부품 번호:
- MXP120A063SE-T1GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 221W | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.23mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Width | 10.28mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 221W | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Length 9.23mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Width 10.28mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs ensures reliability during faults
Operating voltage range for gate-source control optimises flexibility
Continuous drain current capability supports robust energy transfer
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