Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 4-Pin TO-247AD MXP120A063SL-GE3
- RS 제품 번호:
- 790-415
- 제조사 부품 번호:
- MXP120A063SL-GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩26,040.00
일시적 품절
- 2027년 2월 15일 부터 배송
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- RS 제품 번호:
- 790-415
- 제조사 부품 번호:
- MXP120A063SL-GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247AD | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 205W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Length | 23.6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247AD | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 205W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 16.13mm | ||
Height 5.21mm | ||
Length 23.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 1200 V N-Channel SiC MOSFET is engineered for high-performance power applications, offering efficiency, speed, and reliability. Its Advanced design ensures robust operation under demanding conditions while maintaining eco-friendly compliance.
Fast switching speed enhances efficiency in power conversion
Short circuit withstand time of 3 μs increases device reliability
Low on-state resistance of 63 mΩ at 25 °C minimises energy loss
High voltage ratings of up to 1200 V support versatile applications
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