onsemi NTB N-Channel MOSFET, 30 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG080N120SC1
- RS 제품 번호:
- 205-2450
- 제조사 부품 번호:
- NTBG080N120SC1
- 제조업체:
- onsemi
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 205-2450
- 제조사 부품 번호:
- NTBG080N120SC1
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 3.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Height | 4.3mm | |
| Width | 9.7mm | |
| Standards/Approvals | This Device is Pb-Free and is RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 3.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Height 4.3mm | ||
Width 9.7mm | ||
Standards/Approvals This Device is Pb-Free and is RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
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