Vishay SISS64DN N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3
- RS 제품 번호:
- 736-356
- 제조사 부품 번호:
- SISS64DN-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
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₩1,990.00
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | ₩1,990.00 |
| 25 - 99 | ₩1,320.00 |
| 100 - 499 | ₩670.00 |
| 500 + | ₩648.00 |
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- RS 제품 번호:
- 736-356
- 제조사 부품 번호:
- SISS64DN-T1-UE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISS64DN | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISS64DN | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management in various applications, ensuring reliable operation under demanding conditions with Advanced features for reduced switching losses.
Supports synchronous rectification and high power density applications
Ultra-low on-state resistance at specified gate voltages
High continuous drain current rating for demanding loads
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