Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3

N
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₩1,990.00

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Tape(s)
Per Tape
1 - 24₩1,990.00
25 - 99₩1,320.00
100 - 499₩670.00
500 +₩648.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
736-356
제조사 부품 번호:
SISS64DN-T1-UE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

SISS64DN

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient power management in various applications, ensuring reliable operation under demanding conditions with Advanced features for reduced switching losses.

Supports synchronous rectification and high power density applications

Ultra-low on-state resistance at specified gate voltages

High continuous drain current rating for demanding loads

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