Vishay SISS126DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8 SISS126DN-T1-UE3

N
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₩1,940.25

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Tape(s)
Per Tape
1 - 24₩1,940.25
25 - 99₩1,287.00
100 - 499₩653.25
500 +₩631.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
735-130
제조사 부품 번호:
SISS126DN-T1-UE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212-8

Series

SISS126DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00825Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.6nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for optimal efficiency in power management applications, delivering high performance while operating within specified limits.

Operates at a drain-source voltage of 80 V for reliable performance

Exhibits very low on-state resistance to minimise power loss

Offers a high continuous drain current rating of up to 54.7 A

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