Vishay TrenchFET N channel-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3

N
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₩2,522.96

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  • 2027년 4월 23일 부터 배송
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1 - 9₩2,522.96
10 - 24₩1,639.36
25 - 99₩861.04
100 - 499₩840.36
500 +₩819.68

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
735-241
제조사 부품 번호:
SISS516DN-T1-UE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8S

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

18.3nC

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

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