Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-UE3

N
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Subtotal (1 tape of 1 unit)*

₩3,802.00

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Tape(s)
Per Tape
1 - 9₩3,802.00
10 - 24₩2,482.00
25 - 99₩1,298.00
100 - 499₩1,252.00
500 +₩1,230.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
736-351
제조사 부품 번호:
SISS26DN-T1-UE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8S

Series

SISS26DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

24.5nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for power management applications, featuring robust specifications and efficient operation tailored for demanding electronic environments.

TrenchFET Gen IV technology ensures superior performance and efficiency

Capable of handling a maximum drain-source voltage of 60 V

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