Vishay SiSS60DN N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3

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RS 제품 번호:
188-4904
제조사 부품 번호:
SISS60DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS60DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

57nC

Maximum Gate Source Voltage Vgs

-12V, +16V

Forward Voltage Vf

680mV

Maximum Operating Temperature

150°C

Length

3.3mm

Height

780μm

Width

3.3mm

Standards/Approvals

No

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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