Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3
- RS 제품 번호:
- 228-2933
- 제조사 부품 번호:
- SiSS54DN-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩16,536.00
마지막 RS 재고
- 최종적인 5,965 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,307.20 | ₩16,536.00 |
| 50 - 95 | ₩3,248.70 | ₩16,243.50 |
| 100 - 245 | ₩3,194.10 | ₩15,970.50 |
| 250 - 995 | ₩3,135.60 | ₩15,678.00 |
| 1000 + | ₩3,077.10 | ₩15,385.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 228-2933
- 제조사 부품 번호:
- SiSS54DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 185.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.06mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 185.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.06mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 30-V (D-S) MOSFET.
100 % Rg and UIS tested
관련된 링크들
- Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3
- Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3
- Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3