STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- RS 제품 번호:
- 719-468
- 제조사 부품 번호:
- SCT018W65G3AG
- 제조업체:
- STMicroelectronics
N
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₩27,673.60
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- 2026년 3월 30일 부터 279 개 단위 배송
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- RS 제품 번호:
- 719-468
- 제조사 부품 번호:
- SCT018W65G3AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | HIP-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Power Dissipation Pd | 398W | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type HIP-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Power Dissipation Pd 398W | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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