STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- RS 제품 번호:
- 719-468
- 제조사 부품 번호:
- SCT018W65G3AG
- 제조업체:
- STMicroelectronics
N
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Subtotal (1 unit)*
₩25,643.20
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩25,643.20 |
| 5 + | ₩24,872.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 719-468
- 제조사 부품 번호:
- SCT018W65G3AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HIP-247-3 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 398W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HIP-247-3 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 398W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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