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STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

RS 제품 번호:: 719-468
제조사 부품 번호:: SCT018W65G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

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₩25,643.20

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299 개 단위 배송 준비 완료

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RS 제품 번호:: 719-468
제조사 부품 번호:: SCT018W65G3AG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	N channel
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	650V
	Package Type	HIP-247-3
	Series	SCT
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.6V
	Maximum Power Dissipation Pd	398W
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	76nC
	Maximum Operating Temperature	200°C
	Width	5.15 mm
	Height	20.15mm
	Length	15.75mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type N channel
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 650V
	Package Type HIP-247-3
	Series SCT
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.6V
	Maximum Power Dissipation Pd 398W
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 76nC
	Maximum Operating Temperature 200°C
	Width 5.15 mm
	Height 20.15mm
	Length 15.75mm
	Automotive Standard AEC-Q101

Datasheet - SCT018W65G3AG

COO (Country of Origin):: CN

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

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