STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- RS 제품 번호:
- 719-465
- 제조사 부품 번호:
- SCT018H65G3-7
- 제조업체:
- STMicroelectronics
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩24,300.88
재고있음
- 추가로 2026년 3월 30일 부터 300 개 단위 배송
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|---|---|
| 1 - 4 | ₩24,300.88 |
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 719-465
- 제조사 부품 번호:
- SCT018H65G3-7
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | Sct | |
| Package Type | H2PAK-7 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 385W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series Sct | ||
Package Type H2PAK-7 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 385W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
Width 10.4 mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very fast and robust intrinsic body diode
Very low RDS(on) over the entire temperature range
High speed switching performances
Source sensing pin for increased efficiency
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