ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- RS 제품 번호:
- 687-458
- 제조사 부품 번호:
- RD3L08DBLHRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩3,553.20
재고있음
- 100 개 단위 배송 준비 완료
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,776.60 | ₩3,553.20 |
| 20 - 48 | ₩1,566.04 | ₩3,132.08 |
| 50 - 198 | ₩1,408.12 | ₩2,816.24 |
| 200 - 998 | ₩1,135.52 | ₩2,271.04 |
| 1000 + | ₩1,103.56 | ₩2,207.12 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-458
- 제조사 부품 번호:
- RD3L08DBLHRBTL
- 제조업체:
- ROHM
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L08DBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L08DBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.
Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer
Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads
Features a wide drain-source voltage of 60V suitable for various high-voltage applications
All products are RoHS compliant, supporting environmentally friendly designs
100% avalanche tested for increased reliability and component longevity
Designed in a DPAK TO-252 package for easy mounting in compact circuits
Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions
Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications
관련된 링크들
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