ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL
- RS 제품 번호:
- 687-464
- 제조사 부품 번호:
- RD3G08DBKHRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩3,429.12
일시적 품절
- 2026년 1월 30일 부터 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,714.56 | ₩3,427.24 |
| 20 - 48 | ₩1,513.40 | ₩3,026.80 |
| 50 - 198 | ₩1,355.48 | ₩2,710.96 |
| 200 - 998 | ₩1,094.16 | ₩2,186.44 |
| 1000 + | ₩1,071.60 | ₩2,145.08 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-464
- 제조사 부품 번호:
- RD3G08DBKHRBTL
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RD3G08DBKHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RD3G08DBKHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 175°C | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.
Low on resistance for reduced energy losses during operation
High continuous drain current capability of 80A for robust performance
Power dissipation rating of 76W for reliable operation in high-power applications
Avalanche current rating of 30A, ensuring durability during transient conditions
AEC Q101 qualification for reliability in automotive applications
RoHS compliant with Pb free plating, aligning with environmental standards
Includes packaging specifications like embossed tape for efficient handling
Multiple voltage ratings to cater to diverse circuit designs
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