ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- RS 제품 번호:
- 687-362
- 제조사 부품 번호:
- RD3E08BBJHRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩5,801.68
재고있음
- 추가로 2026년 1월 12일 부터 100 개 단위 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩2,900.84 | ₩5,801.68 |
| 20 - 48 | ₩2,553.04 | ₩5,107.96 |
| 50 - 198 | ₩2,291.72 | ₩4,583.44 |
| 200 - 998 | ₩1,849.92 | ₩3,699.84 |
| 1000 + | ₩1,808.56 | ₩3,615.24 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-362
- 제조사 부품 번호:
- RD3E08BBJHRBTL
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | RD3E08BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series RD3E08BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.
Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss
Pulsed drain current capability of ±160A, accommodating high-demand applications
Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control
Assemblable in a DPAK package for efficient thermal management and compact footprint
Avalanche tested for improved reliability in high-stress electrical environments
AEC Q101 qualified, making it ideal for safety-critical automotive applications.
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