ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- RS 제품 번호:
- 687-468
- 제조사 부품 번호:
- RD3L04BBJHRBTL
- 제조업체:
- ROHM
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩3,342.64
재고있음
- 100 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,671.32 | ₩3,342.64 |
| 20 - 48 | ₩1,470.16 | ₩2,942.20 |
| 50 - 198 | ₩1,323.52 | ₩2,648.92 |
| 200 - 998 | ₩1,071.60 | ₩2,145.08 |
| 1000 + | ₩1,041.52 | ₩2,081.16 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-468
- 제조사 부품 번호:
- RD3L04BBJHRBTL
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L04BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L04BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.
Low on resistance promotes energy efficiency
AEC Q101 qualification ensures high reliability in automotive applications
100% avalanche testing provides assurance of performance under stress
Compatible with a wide temperature range from -55°C to 175°C for versatile usage
Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions
Complete electrical characteristics at 25°C allow precise application in designs
Embossed packaging guarantees secure and efficient storage and handling
Optimised for various applications, including ADAS, infotainment, and lighting
관련된 링크들
- ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL
- ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL
- ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- ROHM RD3 Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 RD3L03BBJHRBTL
- ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL
- ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL