ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL
- RS 제품 번호:
- 687-355
- 제조사 부품 번호:
- RD3P08BBLHRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩6,937.20
재고있음
- 추가로 2026년 1월 12일 부터 100 개 단위 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩3,468.60 | ₩6,937.20 |
| 20 - 98 | ₩3,058.76 | ₩6,117.52 |
| 100 - 198 | ₩2,742.92 | ₩5,485.84 |
| 200 + | ₩2,154.48 | ₩4,308.96 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-355
- 제조사 부품 번호:
- RD3P08BBLHRBTL
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P08BBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P08BBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for robust applications requiring efficient switching. With a maximum voltage rating of 100V and a continuous drain current of 80A, this component delivers reliable power management. Its low on-resistance of just 6.2mΩ ensures minimal energy loss during operation, which is critical for enhancing the efficiency of power supplies. Supporting a wide range of commutated current applications, this MOSFET is AEC-Q101 qualified, making it suitable for automotive environments. Its compact DPAK package allows for improved thermal performance in confined spaces.
Low on resistance enhances energy efficiency, reducing heat generation
100V drain-source voltage rating supports diverse high-voltage applications
Continuous drain current of 80A allows for dependable performance under heavy loads
AEC Q101 qualified, assuring high reliability for automotive applications
Compact TO-252 package facilitates better thermal management and space-saving designs
Robust avalanche capability ensures safety during transient conditions
High power dissipation of 142W accommodates demanding operational needs
Pb free plating and RoHS compliant, aligning with environmentally friendly practices
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