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Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1

RS 제품 번호:: 351-946
제조사 부품 번호:: IPQC60T010S7AXTMA1
제조업체:: Infineon

Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1

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Subtotal (1 unit)*

₩54,433.52

일시적 품절

2026년 5월 04일 부터 배송

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수량	한팩당
1 - 9	₩54,433.52
10 - 99	₩49,000.32
100 +	₩45,170.76

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-946
제조사 부품 번호:: IPQC60T010S7AXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	174A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-HDSOP-22
	Series	IPQC60
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	0.01Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	694W
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	318nC
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Height	2.35mm
	Length	15.5mm
	Width	10.43 mm
	Standards/Approvals	AEC Q101
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 174A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-HDSOP-22
	Series IPQC60
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 0.01Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 694W
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 318nC
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Height 2.35mm
	Length 15.5mm
	Width 10.43 mm
	Standards/Approvals AEC Q101
	Automotive Standard AEC-Q101

Datasheet - IPQC60T010S7AXTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, battery disconnect, and eFuses.

Minimized conduction losses

Increased system performances

Allowing more compact design over EMR

Lower TCO over prolonged time

Enabling higher power density designs

Reduction of external sensing elements

Best utilization of power transistor

Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1

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