Infineon CoolMOSTM8thgeneration Type N-Channel MOSFET, 65 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R037CM8XTMA1
- RS 제품 번호:
- 348-996
- 제조사 부품 번호:
- IPDQ60R037CM8XTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩13,697.68
일시적 품절
- 2026년 5월 25일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩13,697.68 |
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| 1000 + | ₩9,450.76 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-996
- 제조사 부품 번호:
- IPDQ60R037CM8XTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | CoolMOSTM8thgeneration | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 338W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series CoolMOSTM8thgeneration | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 338W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
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