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Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

RS 제품 번호:: 348-993
제조사 부품 번호:: IPDQ60R007CM8XTMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

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Subtotal (1 unit)*

₩62,460.00

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2027년 2월 26일 부터 배송

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RS 제품 번호:: 348-993
제조사 부품 번호:: IPDQ60R007CM8XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	288A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1249W
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 288A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1249W
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS

Datasheet - IPDQ60R007CM8XTMA1

COO (Country of Origin):: MY

Infineon IPD Series MOSFET, 600V Drain Source Voltage, 288A Continuous Drain Current - IPDQ60R007CM8XTMA1

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications in surface-mounted electronics. It operates across a wide temperature range and is intended for use where rapid switching and substantial continuous current handling are required in demanding electrical systems.

Features and Benefits:

• 600V drain voltage enables high-voltage system compatibility
• 7 mΩ low on-resistance reduces conduction losses
• 288A continuous current supports high-current loads
• 1249W power dissipation allows sustained thermal handling
• 37 nC typical gate charge enables faster switching transitions
• 30V gate tolerance protects against gate overdrive excursions

Applications

• Used for power supplies in industrial equipment
• Suitable for motor-drive stages in traction systems
• Ideal for high-current converters in renewable installations
• Can be used for DC-DC conversion in telecom racks
• Used with high-temperature electronics in automotive subsystems

What package type should designers expect for PCB layout?

It is supplied in a 22-pin PG-HDSOP-22 surface-mount package suitable for compact board layouts and thermal pad arrangements.

How does the device perform in elevated ambient conditions?

The component is specified to operate up to 150 °C, allowing use in high-temperature environments with appropriate thermal management.

What gate-drive considerations are required for switching?

The gate must be driven within ±30V limits and the typical gate charge of 37 nC should be accounted for when sizing the driver to achieve desired switching speeds.

Is the device suitable for low-temperature applications?

The part is rated down to -55 °C, enabling deployment in cold-climate systems with assured electrical performance.