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Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

RS 제품 번호:: 348-993
제조사 부품 번호:: IPDQ60R007CM8XTMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

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Subtotal (1 unit)*

₩56,994.08

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2027년 11월 15일 부터 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-993
제조사 부품 번호:: IPDQ60R007CM8XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	288A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Power Dissipation Pd	1249W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 288A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Power Dissipation Pd 1249W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS

Datasheet - IPDQ60R007CM8XTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

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