Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- RS 제품 번호:
- 284-782
- 제조사 부품 번호:
- ISC030N12NM6ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 5000 units)*
₩32,370,000.00
일시적 품절
- 2026년 9월 03일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 + | ₩6,474.00 | ₩32,371,950.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-782
- 제조사 부품 번호:
- ISC030N12NM6ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TSON-8 | |
| Series | OptiMOS 6 Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TSON-8 | ||
Series OptiMOS 6 Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon MOSFET is a state of the ART Power Transistor designed for high frequency switching applications, boasting exceptional performance and efficiency. This N channel MOSFET is optimised for use in various industrial applications, ensuring Peak reliability even under demanding conditions. With its low on resistance and remarkable gate charge characteristics, it enhances performance in synchronous rectification and power conversion systems. The device operates efficiently at high temperatures, making it suitable for a range of applications across sectors. Its Compact PG TSON 8 3 package further enables space saving designs while ensuring superior thermal performance, making it a preferred choice for engineers seeking high quality power management solutions.
Very low on resistance minimizes power losses
High efficiency with excellent gate charge
Seamless operation in high frequency applications
High avalanche energy rating for durability
Operates effectively up to 175°C
Complies with RoHS standards for safety
MSL 1 classification for flexible handling
Optimised for synchronous rectification performance
관련된 링크들
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor, 172 A, 135 V Enhancement, 8-Pin PG-TSON-8 ISC037N13NM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 151 A, 60 V, 8-Pin PG-TSON-8 IQE022N06LM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 63 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1