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Infineon IPZ Type N-Channel MOSFET, 123 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1

RS 제품 번호:: 349-268
제조사 부품 번호:: IPZA60R016CM8XKSA1
제조업체:: Infineon

Infineon IPZ Type N-Channel MOSFET, 123 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1

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Subtotal (1 unit)*

₩31,307.64

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240 개 단위 배송 준비 완료

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RS 제품 번호:: 349-268
제조사 부품 번호:: IPZA60R016CM8XKSA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	123A
	Maximum Drain Source Voltage Vds	600V
	Series	IPZ
	Package Type	PG-TO247-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	171nC
	Maximum Power Dissipation Pd	521W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 123A
	Maximum Drain Source Voltage Vds 600V
	Series IPZ
	Package Type PG-TO247-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 171nC
	Maximum Power Dissipation Pd 521W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No

Datasheet - IPZA60R016CM8XKSA1

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPZ Type N-Channel MOSFET, 123 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1

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