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Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

RS 제품 번호:: 349-265
제조사 부품 번호:: IPW60R016CM8XKSA1
제조업체:: Infineon

Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

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Subtotal (1 unit)*

₩28,538.40

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240 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩28,538.40
10 - 99	₩25,686.44
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-265
제조사 부품 번호:: IPW60R016CM8XKSA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	123A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-TO-247
	Series	IPW
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	521W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	171nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 123A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-TO-247
	Series IPW
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 521W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 171nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No

Datasheet - IPW60R016CM8XKSA1

COO (Country of Origin):: CN

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

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