Infineon IPP Type N-Channel Power Transistor, 98 A, 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1

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Subtotal (1 pack of 5 units)*

₩24,750.20

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한팩당*
5 - 45₩4,950.04₩24,750.20
50 - 95₩4,703.76₩23,522.56
100 +₩4,354.08₩21,774.16

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-117
제조사 부품 번호:
IPP073N13NM6AKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

135V

Series

IPP

Package Type

PG-TO220-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

158W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

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