Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1
- RS 제품 번호:
- 348-904
- 제조사 부품 번호:
- ISA220280C03LMDSXTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩15,604.00
재고있음
- 4,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 180 | ₩780.20 | ₩15,611.52 |
| 200 - 480 | ₩742.60 | ₩14,844.48 |
| 500 - 980 | ₩686.20 | ₩13,739.04 |
| 1000 - 1980 | ₩633.56 | ₩12,656.16 |
| 2000 + | ₩609.12 | ₩12,178.64 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-904
- 제조사 부품 번호:
- ISA220280C03LMDSXTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TO252-3 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Width | 5 mm | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Length | 6.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TO252-3 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Width 5 mm | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Length 6.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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