Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1

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₩17,709.60

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한팩당*
20 - 180₩885.48₩17,694.56
200 - 480₩840.36₩16,818.48
500 - 980₩778.32₩15,570.16
1000 - 1980₩718.16₩14,344.40
2000 +₩689.96₩13,802.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
348-912
제조사 부품 번호:
ISA170170N04LMDSXTMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.6A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-DSO-8

Series

ISA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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