Infineon ISA Type N, Type P-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩16,619.20

Add to Basket
수량 선택 또는 입력
재고있음
  • 4,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
한팩당*
10 - 90₩1,661.92₩16,611.68
100 - 240₩1,577.32₩15,778.84
250 - 490₩1,460.76₩14,613.24
500 - 990₩1,344.20₩13,447.64
1000 +₩1,295.32₩12,947.56

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
348-909
제조사 부품 번호:
ISA170230C04LMDSXTMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

9.6A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-DSO-8

Series

ISA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Width

5 mm

Standards/Approvals

JEDEC, IEC61249‐2‐21

Height

1.75mm

Length

6.2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

관련된 링크들