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Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

RS 제품 번호:: 348-906
제조사 부품 번호:: ISA150233C03LMDSXTMA
제조업체:: Infineon

Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩20,830.40

재고있음

4,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 180	₩1,041.52	₩20,837.92
200 - 480	₩988.88	₩19,796.40
500 +	₩917.44	₩18,341.28

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-906
제조사 부품 번호:: ISA150233C03LMDSXTMA
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	10.2A
	Maximum Drain Source Voltage Vds	30V
	Series	ISA
	Package Type	PG-DSO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	23.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Length	6.2mm
	Width	5 mm
	Standards/Approvals	IEC61249‐2‐21, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 10.2A
	Maximum Drain Source Voltage Vds 30V
	Series ISA
	Package Type PG-DSO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 23.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Length 6.2mm
	Width 5 mm
	Standards/Approvals IEC61249‐2‐21, JEDEC
	Automotive Standard No

Datasheet - ISA150233C03LMDSXTMA

COO (Country of Origin):: CN

The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

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