onsemi NTH Type N-Channel MOSFET, 140 A, 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- RS Stock No.:
- 277-041
- Mfr. Part No.:
- NTH4L018N075SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
₩36,178.72
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- 2026년 6월 17일 부터 배송
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Units | Per unit |
|---|---|
| 1 - 9 | ₩36,178.72 |
| 10 - 99 | ₩32,555.96 |
| 100 + | ₩30,036.76 |
*price indicative
- RS Stock No.:
- 277-041
- Mfr. Part No.:
- NTH4L018N075SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | NTH | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 262nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series NTH | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 262nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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