onsemi NTH Type N-Channel MOSFET, 140 A, 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- RS 제품 번호:
- 277-041
- 제조사 부품 번호:
- NTH4L018N075SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩36,178.72
일시적 품절
- 2026년 5월 11일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩36,178.72 |
| 10 - 99 | ₩32,555.96 |
| 100 + | ₩30,036.76 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 277-041
- 제조사 부품 번호:
- NTH4L018N075SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | NTH | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 262nC | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series NTH | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 262nC | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
관련된 링크들
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1
- onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1
- onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L080N120SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L040N120SC1
- onsemi NTH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L160N120SC1
