Infineon FP10R12W1T4B3BOMA1 IGBT Module, 20 A 1200 V Module, Panel
- RS 제품 번호:
- 273-7394
- 제조사 부품 번호:
- FP10R12W1T4B3BOMA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 273-7394
- 제조사 부품 번호:
- FP10R12W1T4B3BOMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL E83335 | |
| Height | 15.5mm | |
| Length | 62.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type Module | ||
Mount Type Panel | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL E83335 | ||
Height 15.5mm | ||
Length 62.8mm | ||
Automotive Standard No | ||
The Infineon IGBT module has rugged mounting due to integrated mounting clamps. This IGBT module features a VCEsat with positive temperature coefficient and Al2O3 substrate with low thermal resistance. It is suitable for auxiliary inverters, air conditioning and motor drives applications.
Low VCEsat
Trench IGBT 4
Compact design
Low switching losses
Solder contact technology
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