제조사부품번호

Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V

RS 제품 번호:: 244-5391
제조사 부품 번호:: FP25R12W2T4B11BOMA1
제조업체:: Infineon

Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V

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Subtotal (1 unit)*

₩86,540.00

5 개 단위 배송 준비 완료

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수량	한팩당
1 - 1	₩86,540.00
2 - 2	₩84,820.00
3 - 3	₩83,140.00
4 - 4	₩81,460.00
5 +	₩79,840.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5391
제조사 부품 번호:: FP25R12W2T4B11BOMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	175W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Maximum Operating Temperature	150°C
	Length	51mm
	Width	42.5mm
	Series	FP25R12W2T4B11B
	Standards/Approvals	RoHS
	Height	12mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 175W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Maximum Operating Temperature 150°C
	Length 51mm
	Width 42.5mm
	Series FP25R12W2T4B11B
	Standards/Approvals RoHS
	Height 12mm
	Automotive Standard No

Datasheet - FP25R12W2T4B11BOMA1

Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1

This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.

Features and Benefits:

• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels

Applications

• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry

What ambient range can it withstand?

It is specified to function down to −40°C and up to 150°C.

How does the gate-emitter limit affect driver selection?

Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.

What electrical characteristic reduces energy loss during conduction?

The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.

How many switching elements are integrated in the package?

The module contains seven discrete transistors within a single enclosure.

Is the product suitable for environmentally restricted manufacturing?

It meets RoHS requirements and is therefore compliant with lead-free process constraints.