Infineon FP10R12W1T4BOMA1 IGBT Module, 20 A 1200 V
- RS 제품 번호:
- 244-5383
- 제조사 부품 번호:
- FP10R12W1T4BOMA1
- 제조업체:
- Infineon
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 244-5383
- 제조사 부품 번호:
- FP10R12W1T4BOMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 105 W | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 105 W | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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