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Infineon FP30R06W1E3BOMA1 IGBT Module 600 V

RS 제품 번호:: 244-5395
제조사 부품 번호:: FP30R06W1E3BOMA1
제조업체:: Infineon

Infineon FP30R06W1E3BOMA1 IGBT Module 600 V

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Subtotal (1 tray of 24 units)*

₩1,062,528.00

24 개 단위 배송 준비 완료

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수량	한팩당	Per Tray*
24 - 24	₩44,272.00	₩1,062,542.00
48 - 48	₩43,386.00	₩1,041,278.00
72 +	₩42,520.00	₩1,020,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5395
제조사 부품 번호:: FP30R06W1E3BOMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	600V
	Number of Transistors	7
	Maximum Power Dissipation Pd	115W
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Length	62.8mm
	Series	FP30R06W1E3B
	Width	33.8mm
	Height	12mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 600V
	Number of Transistors 7
	Maximum Power Dissipation Pd 115W
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Length 62.8mm
	Series FP30R06W1E3B
	Width 33.8mm
	Height 12mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - FP30R06W1E3BOMA1

Infineon FP30R06W1E3B Series IGBT Module, 600V Max Collector-Emitter Voltage, 115W Maximum Power Dissipation - FP30R06W1E3BOMA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converters and power systems. It operates across a broad temperature span and is intended for applications where high voltage handling and defined gate control are required.

Features and Benefits:

• 600 V rating enables handling of high-voltage DC circuits
• 115 W maximum dissipation allows sustained power handling
• VGE 20 V gate tolerance supports standard gate-drive voltages
• Low VCE(sat) 2 V reduces conduction losses during on-state
• Seven-transistor topology increases switching density and functionality
• RoHS compliance ensures restriction of hazardous substances

Applications

• Suitable for medium-voltage inverter stages in industrial drives
• Ideal for power conversion in renewable-energy inverters
• Used with motor-control units requiring multiple switching elements
• Can be used for DC-DC conversion in high-voltage systems
• Suitable for laboratory test rigs evaluating high-temperature switching

What thermal extremes can it withstand during operation?

It is rated to function down to −40 °C and up to 150 °C continuous junction temperature.

How does the transistor count influence circuit design?

Having seven transistors permits Compact multi-switch arrangements and reduces external component count for multi-phase or parallel configurations.

What electrical limit defines the off-state voltage capability?

The module's maximum collector-emitter voltage specifies its off-state voltage withstand at 600 V.

How should designers account for power loss in thermal planning?

Use the 115 W maximum power dissipation figure to size heatsinking and thermal interfaces to maintain junction temperature limits.

Are there any environmental supply restrictions indicated for selection?

The unit meets RoHS requirements restricting certain hazardous materials in the assembly.